WIN Semiconductors Corp. announces the commercial release of its high integration mmWave GaAs platform, PIH1-10.
Optimized for 5G front-ends, the PIH1-10 technology combines an advanced 100GHz ƒt enhancement-mode pHEMT with monolithic PIN and Schottky diodes to provide best in class mmWave performance for all front-end functions. WIN is the first compound semiconductor wafer foundry to commercialize an integrated GaAs platform capable of producing single chip front-ends for 5G handsets and mmWave radio access networks.
The core of PIH1-10 is an E-Mode pHEMT that provides the gain, power density and efficiency for mmWave transmit power amplifiers, and the noise performance needed in the receive LNA. This versatile single supply transistor can support Tx power levels of 30dBm and Rx noise figure of 2.5dB at mmWave frequencies.
Furthermore, the integrated PIN diode provides excellent mmWave Tx/Rx switch functionality with <1dB insertion loss, enabling monolithic integration of all front-end functions on a single chip.
GaAs technology outperforms BiCMOS in every front-end function, and mmWave single-chip front ends realized in PIH1-10 can reduce array power consumption, simplify thermal management, and extend battery life in 5G user equipment while improving total cost of ownership for mmWave access points.
For more information, visit http://www.winfoundry.com/en_US/Index.aspx.